标题: | 电荷帮浦法于薄闸极氧化层浅接面延伸结构之N型金氧半元件电浆蚀刻伤害之研究 Charge Pumping Technique for the Evaluation of Plasma Induced Edge Damage in Shallow S/D Extension |
作者: | 高瑄苓 Hsuan-ling Kao 庄绍勋 Steve S. Chung 电子研究所 |
关键字: | 电浆蚀刻;闸极边缘区域的伤害;电浆放电造成的伤害;plasma damage;plasma edge damage;plasma charging damage |
公开日期: | 1999 |
摘要: | 在现今高密度IC制程中,电浆蚀刻制程技术最被广泛使用。然而,电浆蚀刻导致之元件伤害是无可避免的,尤其是对于短通道元件,有越趋严重的情形,将是目前可靠性面临的主要问题之一。电浆蚀刻将对元件带来两种型态的伤害,一是电浆放电造成的伤害(Plasma Charging Damage),另一则是闸极边缘区域的伤害(Plasma Edge Damage)。在过去,这两种伤害往往是被独立探讨的。 在本研究论文中,我们提出一个新的机制,即是两种形式的电浆伤害并非完全独立的两回事,而是会有电浆放电增强闸极边缘伤害(Plasma Charging Enhance Edge Damage)的情况发生。我们利用不同天线结构(Antenna Structure)来对电浆蚀刻导致之伤害进行研究。对短通道元件而言,电浆导致的会随元件通道长度缩小而增强,我们采用电荷帮浦法来萃取界面电荷(interface state)及氧化层电荷(oxide charge),深入探讨元件制程伤害程度以及评估其电浆蚀刻导致的热载子伤害程度。最后,针对三种改善电浆蚀刻伤害之制程(氧化层的材质改善、多晶矽闸极再氧化气氛变化、以及电浆过度蚀刻时间之控制)进行实验分析与比较,证实可以有效的改善蚀刻伤害所造成的元件可靠性问题。 Plasma etching is the most popular technology for the modern IC manufacturing. However, plasma etching induced damage has become more and more serious and can not be avoided, in particular for short channel devices. This has been one of the majors issue in reliability. Plasma interaction with the silicon wafer during etching process produces damage. There are two types of damage induced by plasma etching. One is the plasma charging damage and the other one is the plasma edge damage. In the past, these two types of damages are usually studied independently. In this thesis, we proposed a new mechanism to explain the observed plasma charging damage induced edge damage. The two types of damage are not independent but correlated with each other. The devices with different antenna structures will be used to study the plasma induced edge damage. For a reduced channel length, an enhanced device degradation was observed near drain region. The charge pumping method has been employed to extract the interface states and oxide charge, which can provide accurate information of the plasma induced damage as well as the hot carrier induced damage. Finally, three curing process including gate oxide forming gas, poly-reoxidation ambiances, and controllable over-etch time will be used to study the way to improving the plasma induced damage. It was verified that the proposed methods are very efficient for improving the plasma induced device reliability. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT880428120 http://hdl.handle.net/11536/65764 |
显示于类别: | Thesis |