標題: 退火對雷射濺鍍鈦酸鍶同質磊晶薄膜成長機制的影響
The Study of The Influence of Annealing for Growth of Homoepitaxial SrTiO3 Thin Films Using Laser Ablation Technique
作者: 張維娟
Wei-Chuan Chang
郭義雄
吳光雄
Yih-Shun Gou
Kaung-Hsiung Wu
電子物理系所
關鍵字: 鈦酸鍶;退火;反射式高能量電子繞射;原子力顯微鏡;SrTiO3;annealing;RHEED;AFM
公開日期: 1999
摘要: 本實驗目的是研究利用脈衝式雷射分子束磊晶(Laser MBE)的鍍膜方式下,在鈦酸鍶(SrTiO3,全名Strontium titanate)(100)拋光基板上成長同質磊晶(SrTiO3/SrTiO3),並使用反射式高能量電子繞射系統(RHEED)研究鈦酸鍶薄膜同質磊晶成長機制。由於雷射分子束磊晶(Laser MBE)可以在實驗過程中任意調整雷射重複率來改變薄膜蒸鍍速率,故本實驗充分利用此優點並配合不同溫度的退火,觀察到雷射重複率與RHEED強度分別在下降深度、下降所需時間以及退火曲線等所受到的影響。我們發現影響薄膜成長主要是基板的溫度與雷射重覆率。透過AFM影像讀取,發現當基板溫度愈高或雷射重覆率降低,表面結構愈平坦。在不同溫度進行不同時間的退火,可由其中獲得擴散係數的訊息。加上我們研究群之前已獲得的相關資訊,由研究退火在鈦酸鍶薄膜成長機制上的影響,期能建立氧化物磊晶薄膜成長初期的動態行為。
Using laser ablation to growth homoepitaxial thin films on SrTiO3 as-polished substrates. And study the growth mechanism of SrTiO3 homo-epitaxial thin films using reflected high energy electron diffraction (RHEED) system. The main advantage of Laser MBE is that it can change laser repetition rate during experiment process. So, annealing at different temperatures, we can have different RHEED oscillation curves. From these curves, we find that the most important factors of influence for growth thin films are temperatures and laser repetition rate. Comparing with AFM images, we hope to build the growth model about SrTiO3 homoepitaxial thin films.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT880429007
http://hdl.handle.net/11536/65797
Appears in Collections:Thesis