碲摻雜磷化銦鋁鎵材料的缺陷研究

Abstract

在本論文中，我們以深能階暫態頻譜分析儀來量測用MOCVD (metal-organic chemical vapor deposition) 成長的碲摻雜磷化銦鋁鎵材料 ( Te-doped (AlxGa1-x)0.5In0.5P)。我們準備了不同鋁比例（x從零到一）的碲摻雜磷化銦鋁鎵材料來做研究。我們使用的結構是蕭基二極體。在量測過程中，我們量到了兩個缺陷(E1和E2)，它們的活化能分別為0.18eV 和0.31eV。 E1缺陷濃度在低鋁比例時會隨著比例增加而增加，在鋁比例為零點五時有最大值，而在高比例時會隨著比例增加而減少。而且這兩個缺陷的濃度都會隨著摻雜濃度增加而上升。所以E1和E2都是和摻雜相關的缺陷。因為E1在鋁比例為間接能系及直接能系接觸點的時有最大值，而且又是和摻雜有關，所以這個缺陷和矽及硒摻雜磷化銦鋁鎵材有一些相似的性質。

Deep level transient spectroscopy was employed to measure the defects in Te-AlGaInP which were grown by metal-organic chemical vapor deposition. Samples of Te-doped (AlxGa1-x)0.5In0.5P with different composition (x=0.75, 0.5, 0.25, 0) were prepared. The sample construction here is Schottky diode. Two peaks (E1 and E2) were found. Their Activation were 0.18 and 0.31eV, respectively. Trap E1 increases from x=0 to x=0.5 and decreases for x>0.5. The trap concentration (E1) has a maximum at approximately x=0.5. The trap concentration of E1 and E2 increase with increasing the donor concentration. Both of them behave similarly to Te-related deep level. Trap E1 has a maximum at the composition where the direct-indirect crossover occurs, and is a dopant related deep level. Comparing our results with other investigation into Si-, and Se-doped AlGaInP reveals that deep level (E1) have similar characteristics.