利用氟和/或氮離子佈植於矽化鈷堆疊閘極氧化層之特性研究

Abstract

在本論文中，我們利用在氧化層上，使用複晶矽堆疊的矽化鈷閘極結構來改善氧化層的的特性。並使用氮和/或氟離子佈植和之後的高溫退火來改善氧化層的特性。我們藉由崩潰電場、漏電流、崩潰電荷和原子力顯微鏡（AFM）的電性和物性量測，觀察到堆疊閘極結構會得到較為平滑的交界表面。並可以有效的抑制流電流。再者，氮和/或氟離子佈植得到較大的崩潰電場和較大崩潰電荷。原因是因為矽和氟形成有效的和較強化學鍵可抵抗外界施加的電場和形成較為堅固和緻密的絕緣層。

The effect of fluorine and/or nitrogen on GOI for deep-submicron Co-salicide had been evaluated in this investigation. We investigated the electrical characteristics of the Co-policide MOS capacitance with the poly-Si, poly-Si/a-Si stacked gate and a-Si/poly-Si stacked gate in terms of surface roughness, breakdown field, leakage current, and charge to breakdown. A stacked gate structure was used to effectively suppress anomalous leakage in this study. Moreover, fluorination and nitridation of gate oxide structures was used to survey the effects following oxide growth .It is found that the smoother poly-Si / SiO2 interface can be obtained by replacing AP sample. As for the electrical characteristic, it is found that the stacked gate structure has been demonstrated to improve the electric characteristics of Co-salicide formation in gate region. In the breakdown field, the a-Si / poly-Si structure could increase the breakdown field because of forming better Co-salicide film. And nitrogen and fluorinated gate oxide would improved breakdown charge dramatically. Moreover, The poly-Si /a-Si structure has smooth interface to reduce the leakage current and SILC as well.