Full metadata record
DC FieldValueLanguage
dc.contributor.authorLee, Weien_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:08:39Z-
dc.date.available2014-12-08T15:08:39Z-
dc.date.issued2009-10-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2009.2028376en_US
dc.identifier.urihttp://hdl.handle.net/11536/6637-
dc.description.abstractThis paper reports a generalized temperature-dependent channel backscattering extraction method that can self-consistently determine the temperature sensitivity of the low-field mobility and the critical length in nanoscale MOSFETs. Through comparing the gate voltage and temperature dependence, we have shown that assuming constant temperature sensitivity of the low-field mobility and the critical length will result in unphysical backscattering characteristics. We have also investigated the limitation in this self-consistent method and proposed guidelines for experimental extraction. Our results show that channel backscattering is increased for NMOSFETs with higher body doping and HfO(2) dielectric and can be reduced for PMOSFETs when the process-induced uniaxial compressive strain technology is employed. This paper indicates that the self-consistent temperature-dependent method is competent to be routinely used in technology development for the process monitoring purpose.en_US
dc.language.isoen_USen_US
dc.subjectBallistic transporten_US
dc.subjectchannel backscatteringen_US
dc.subjectCMOSFETen_US
dc.subjectprocess monitoringen_US
dc.titleOn the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purposeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2009.2028376en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume56en_US
dc.citation.issue10en_US
dc.citation.spage2285en_US
dc.citation.epage2290en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000270036300015-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000270036300015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.