On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose

Abstract

This paper reports a generalized temperature-dependent channel backscattering extraction method that can self-consistently determine the temperature sensitivity of the low-field mobility and the critical length in nanoscale MOSFETs. Through comparing the gate voltage and temperature dependence, we have shown that assuming constant temperature sensitivity of the low-field mobility and the critical length will result in unphysical backscattering characteristics. We have also investigated the limitation in this self-consistent method and proposed guidelines for experimental extraction. Our results show that channel backscattering is increased for NMOSFETs with higher body doping and HfO(2) dielectric and can be reduced for PMOSFETs when the process-induced uniaxial compressive strain technology is employed. This paper indicates that the self-consistent temperature-dependent method is competent to be routinely used in technology development for the process monitoring purpose.