標題: | Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices |
作者: | Chen, Wei-Chen Lin, Horng-Chih Chang, Yu-Chia Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 28-九月-2009 |
摘要: | A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238362] |
URI: | http://dx.doi.org/10.1063/1.3238362 http://hdl.handle.net/11536/6652 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3238362 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 95 |
Issue: | 13 |
結束頁: | |
顯示於類別: | 期刊論文 |