具有較厚源/汲極與較寬通道的多晶矽薄膜電晶體的模擬與電性分析

Abstract

本篇論文中，我們將探討具有較厚源/汲極及較寬通道的新穎複晶矽薄膜電晶體結構的電性。從模擬的結果可知，電流可經由較寬的側向通道通過。因此我們研究具備側向通道的堆疊式結構的電性。我們發現飽和電流可以增加，同時漏電流也降低。除此之外，此種結構的製程只需要四道光罩。

In this thesis, we discuss the electrical characteristics of the novel structure of poly-Si TFTs with thick S/D and wider channel. From the simulated results, it can be seen that the drain current follow lines exist in the side channel region. We proposed the novel staggered structure with wider channel region and investigate the electrical properties. We find that the on-state current is increased and leakage current is decreased. In addition, the thick S/D region and a thin channel region could be achieved with only four mask steps.