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dc.contributor.authorHong, Chi-Changen_US
dc.contributor.authorAhn, Hyeyoungen_US
dc.contributor.authorWu, Chen-Yingen_US
dc.contributor.authorGwo, Shangjren_US
dc.date.accessioned2014-12-08T15:08:41Z-
dc.date.available2014-12-08T15:08:41Z-
dc.date.issued2009-09-28en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.17.017227en_US
dc.identifier.urihttp://hdl.handle.net/11536/6657-
dc.description.abstractWe report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In(x)Ga(1-x)N) nanorod arrays. The formation of In(x)Ga(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In(x)Ga(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleStrong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.17.017227en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume17en_US
dc.citation.issue20en_US
dc.citation.spage17227en_US
dc.citation.epage17233en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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