完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hong, Chi-Chang | en_US |
dc.contributor.author | Ahn, Hyeyoung | en_US |
dc.contributor.author | Wu, Chen-Ying | en_US |
dc.contributor.author | Gwo, Shangjr | en_US |
dc.date.accessioned | 2014-12-08T15:08:41Z | - |
dc.date.available | 2014-12-08T15:08:41Z | - |
dc.date.issued | 2009-09-28 | en_US |
dc.identifier.issn | 1094-4087 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OE.17.017227 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6657 | - |
dc.description.abstract | We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In(x)Ga(1-x)N) nanorod arrays. The formation of In(x)Ga(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In(x)Ga(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Strong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arrays | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OE.17.017227 | en_US |
dc.identifier.journal | OPTICS EXPRESS | en_US |
dc.citation.volume | 17 | en_US |
dc.citation.issue | 20 | en_US |
dc.citation.spage | 17227 | en_US |
dc.citation.epage | 17233 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
顯示於類別: | 期刊論文 |