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dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorLee, Jeng-Hanen_US
dc.contributor.authorHuan, Y. S.en_US
dc.contributor.authorSu, Daviden_US
dc.date.accessioned2014-12-08T15:08:42Z-
dc.date.available2014-12-08T15:08:42Z-
dc.date.issued2009-09-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3233963en_US
dc.identifier.urihttp://hdl.handle.net/11536/6663-
dc.description.abstractSecondary electron potential contrast (SEPC) technology with an in situ dynamic trigger was studied to inspect P(+)/N-well junction leakage arising from P-well misalignment in a static random access memory cell. Combining SEPC with scanning electron microscopy observations allows direct identification of the junction shift. Furthermore, an in situ negative bias applied to the P-well can create a wider depletion region and eliminate the leakage path in P(+)/N-well contacts, allowing the P(+)/N well to operate normally. This proposed in situ dynamic trigger method is a promising and effective approach to investigating device physics under a dynamic scope. (C) 2009 American Institute of Physics. [doi:10.1063/1.3233963]en_US
dc.language.isoen_USen_US
dc.titleApplication of secondary electron potential contrast on junction leakage isolationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3233963en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000270243800030-
dc.citation.woscount4-
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