標題: Temperature Effect on Ku-Band Current-Reused Common-Gate LNA in 0.13-mu m CMOS Technology
作者: Chen, Wen-Lin
Chang, Sheng-Fuh
Chen, Kun-Ming
Huang, Guo-Wei
Chang, Jen-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;common gate;current reuse;low-noise amplifier (LNA);zero temperature coefficient
公開日期: 1-Sep-2009
摘要: This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral inductors are obtained over the temperature range from 253 to 393 K. These results show that the optimal bias condition minimizes the transconductance and drain current temperature variations. Based on these results, a current-reused CG-LNA with good temperature performance is designed. At ambient temperatures, the CG-LNA has a measured power gain of 10.3 dB and a noise figure (NF) of 4.3 dB at 15.2 GHz, while consuming 4.5 mA from a 1.3-V power supply. When the temperature varies from 253 to 393 K, the CG-LNA has a power gain variation of 3 dB, NF variation of 2 dB, and dc power consumption variation of 11.9%. This paper is the first to report the temperature effect on Ku-band CG-LNAs.
URI: http://dx.doi.org/10.1109/TMTT.2009.2027074
http://hdl.handle.net/11536/6701
ISSN: 0018-9480
DOI: 10.1109/TMTT.2009.2027074
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 57
Issue: 9
起始頁: 2131
結束頁: 2138
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