互補式金氧半場效電晶體影像感測元件技術(二)

Abstract

現今市場中影像感測器的高解析應用仍是以使用電荷耦合元件為主流，但是因為此種元件有耗電量大，且在製程中無法與一般互補式金氧半場效電晶體一起製成，以致成本居高不下的缺點，使得潮流轉為開發利用互補式金氧半場效電晶體元件製作影像感測器的像素。 此篇論文即是討論利用互補式金氧半場效電晶體元件製成之晶片所使用的架構，包括串續介面及控制、感測器感測影像操作及控制、控制感測器之用的暫存器。串續介面有同步串續介面及通用非同步傳送及接收介面兩種。感測器之主要控制區塊包括有像素及讀取區塊的控制、可程式化增益放大器區塊的控制、和類比數位轉換器的控制。暫存器的資料則是用來控制感測器感測影像操作模式及晶片內部感測資訊的處理。

The pixels of an image sensor are based on CCD (Charge-Coupled device) in current market for high-resolution applications. However, the disadvantages of CCD are large power consumption and incompatible in process with CMOS (Complementary metal-oxide semiconductor) elements for system on a chip to reduce cost. This thesis gives the architecture of a CMOS image sensor chip, including serial interface and its control, the image sensor operation and its control, and the image sensor registers. The serial interface includes synchronous interface and universal asynchronous transmitter and receiver. The main control blocks of the image sensor include the pixel and readout block control, the programmable gain amplifier block control, and the analog to digital converter control. The data of register sets is used to control the capture image operation of the image sensor and the image data processing of the image chip.