利用SU-8光阻二次塗佈製作2.5D微結構之製程研究

Abstract

本研究是利用UV-LIGA製程技術，製作一金屬鎳結構，經由SU-8厚膜光阻的二次塗佈及一次電鍍，以製作出形狀較具變化的微結構，整個元件的製作過程與半導體製程相容性極高，可大量的批次製造。 整個製作過程大致可分為：SU-8厚膜光阻製程及精密微電鍍製程兩部分，首先塗佈第一層SU-8厚膜光阻的厚度為35μm，接著再塗佈第二層SU-8厚膜光阻的厚度為35μm，所以整個光阻模板的厚度為70μm，最後進行電鍍。規劃的最大pattern寬度尺寸為3000μm，最小的pattern寬度尺寸為570μm，所製作金屬微結構的厚度為50∼60μm。

The purpose of this research is to produce a nickel structure by using the UV-LIGA technology. Through the second coating of SU-8 thick photoresist and electroplating, the structure with more shape-changes can be produced. The processes of producing the components and producing the semiconductor are in high compatiblity. Therefore, they can be produced as many as possible. The process of the experiment was divided into two parts: the process of SU-8 thick photoresist and the process of electroplating. The process of SU-8 thick photoresist was started with coating a 35μm SU-8 thick photoresist, followed by another 35μm SU-8 thick photoresist. The pattern plate is 70 μm thick. The thickest pattern of electroplating is 3000 μm, and the thinnest 570μm. The microstructure is 50-60 μm thick.