標題: OPTIMIZATION AND MODELING FOR MOS VARACTORS IN 65 nm LOW-POWER MIXED-SIGNAL/RADIO-FREQUENCY TECHNOLOGY
作者: Chen, Chia Chung
Jiang, Meshon
Chang, Li Ming
Yeh, Tzu Jin
Liu, Feng Ming
Liu, Sally
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;MOS varactor;LC_tank;Q-factor;flicker noise
公開日期: 1-Sep-2009
摘要: CMOS technology scaling opens tip the possibility of designing variable capacitors based oil a metal oxide semiconductor (MOS) structure with improved tuning range and quality factor. In this work, the high Q-factor 24 and 21, wide timing ratio 45% and 36% can be achieved by 65 nm low power technology n+/n-well and p+/p-well MOS varactor up to 10 GHZ, respectively. Meanwhile, the equivalent circuit model, to model intrinsic and extrinsic parameters of MOS varactor, also have demonstrated that parasitic resistance is a main issue to dominate Q-factors, and the measured flicker noise result of MOS varactor is directly dependant on gate leakage current. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2119-2121. 2009; Published online in Wiley InterScience (www.intescience.wiley.com). DOI 10.1002/mop.24567
URI: http://dx.doi.org/10.1002/mop.24567
http://hdl.handle.net/11536/6760
ISSN: 0895-2477
DOI: 10.1002/mop.24567
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 51
Issue: 9
起始頁: 2119
結束頁: 2121
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