標題: Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
作者: Chao, TS
Chien, CH
Hao, CP
Liaw, MC
Chu, CH
Chang, CY
Lei, TF
Sun, WT
Hsu, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nitrogen;boron penetration;pMOSFET;X-ray photoelectron spectroscopy
公開日期: 1-Mar-1997
摘要: The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p(+)-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
URI: http://dx.doi.org/10.1143/JJAP.36.1364
http://hdl.handle.net/11536/683
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.1364
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 3B
起始頁: 1364
結束頁: 1367
Appears in Collections:Conferences Paper


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