标题: 液态雾化源沉积系统制备钛酸锶钡薄膜之特性
Characterizations of Barium Strontium Titanate Thin Films Prepared by Liquid Source Misted
作者: 张仁键
Jen-Chien Chang
曾俊元
Tseung-Yuen Tseng
电子研究所
关键字: BST;LSMCD
公开日期: 2001
摘要: 本篇论文探讨应用于动态随机存取记忆体 (DRAM) 之钛酸锶钡高介电薄膜层的制程与特性 。 除了钛酸锶钡薄膜本身优异的电性外 , 制程条件改善更有助于制备高品质薄膜 , 符合新一代记忆体要求 。 因此 , 我们以液态雾化源沉积系统制备钛酸锶钡薄膜 , 再施以常压快速热退火处理和低压快速热退火处理来增进薄膜的结晶性使薄膜呈现出最优异的电性表现。
根据实验结果 , 薄膜经过传统的长时间缓慢炉冷热退火处理后 , 改善了结晶性但漏电流也跟着变大 ; 相反的 , 快速热退火处理却能以瞬间高能量促使薄膜致密性结晶 , 降低漏电流 。 此外 , 我们也量测了变化温度下的电流对电场关系以讨论不同制程条件和厚度的薄膜漏电流机制 , 以期了解薄膜厚度与薄膜结构与电性相互关系。
最后 , 以电浆退火处理改善钛酸锶钡薄膜特性 , 并分析探讨电浆退火处理对薄膜物性和电性的影响 , 提供可能应用上之参考 。
BaxSr1-xTiO3 thin films are highly promising storage dielectrics in DRAM applications because of their excellent electrical properties . In this thesis , we used the liquid source misted chemical deposition method (LSMCD) to deposit high quality BST thin films . The rapid thermal annealing (RTA) and low pressure – rapid thermal annealing(LP-RTA) are carried out to enhance the film crystallinity and improve the properties of BST thin films for DRAM capacitor application.
On the basis of experimental results, the RTA can achieve the good film crystallinity with low leakage current because the rapid impulsive heat energy make the grains smaller but denser compared with the conventional furnace annealing, which leads to larger grain size and higher leakage current. In addition, we measured and plotted the relation of leakage current v.s. electric field at various temperature for investigating the conduction mechanisms of the films in different processing conditions and thicknesses.
Finally, the effect of plasma annealing on the electrical properties of the films was also investigated in order to provide useful information for possible applications.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT900428004
http://hdl.handle.net/11536/68700
显示于类别:Thesis