標題: Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT
作者: Chang, M. F.
Lee, P. T.
Chin, Albert
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Capping layer;HfAlO;MoN;p-MOSFETs
公開日期: 1-Aug-2009
摘要: By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm(2)/(V . s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 degrees C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2009.2023824
http://hdl.handle.net/11536/6873
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2023824
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 8
起始頁: 861
結束頁: 863
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