完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yen, ST | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:01:57Z | - |
dc.date.available | 2014-12-08T15:01:57Z | - |
dc.date.issued | 1997-03-01 | en_US |
dc.identifier.issn | 0018-9197 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/3.556014 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/688 | - |
dc.description.abstract | GaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized, The valence band structure of quantum wells is obtained by evaluating the 6x6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital split-off hole bands, The effect of optical transition from/to continuum states not confined to the quantum well is studied, It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current, This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain, The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, It can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers, The calculated threshold current agrees wed with the observation, The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | quantum well lasers | en_US |
dc.subject | quantum wells | en_US |
dc.subject | semiconductor device modeling | en_US |
dc.subject | semiconductor lasers | en_US |
dc.subject | spontaneous emission | en_US |
dc.subject | visible lasers | en_US |
dc.title | Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/3.556014 | en_US |
dc.identifier.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 443 | en_US |
dc.citation.epage | 456 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
顯示於類別: | 期刊論文 |