标题: | 氧化型与布植型之垂直共振腔面射型雷射之特性研究 Study of 850 nm Oxidized and Implanted Vertical Cavity Surface Emitting Lasers |
作者: | 李亚儒 Ya-Ju Lee 王 兴 宗 S. C. Wang 光电工程学系 |
关键字: | 面射型雷射;氧化型电流局限结构;质子布植型电流局限结构;VCSEL;oxide-confinement;proton-implantation |
公开日期: | 2001 |
摘要: | 本论文主要是研究 GaAs垂直共振腔面射型雷射的温度特性、近场分析、高频调变以及可靠度分析。用于此研究的雷射有两种不同的结构:一是氧化型电流局限结构,一是质子布植型电流局限结构。 由温度相关雷射输出功率对注入电流的关系,我们发现gain off-set effect,这是只会发生在面射型雷射的独特特性。由此看来,面射型雷射的特性表现与雷射的操作条件有着强烈的相关性。 由近场光学的结果来分析,氧化型电流局限结构比质子布植型电流局限结构有较好的电性与光学特性。我们发现雷射的调变能力会受到寄生阻抗效应 (parasitic impedance effect) 的影响而且我们由relaxation frequency计算出光子在氧化型电流局限结构与质子布植型电流局限结构的生命周期分别为5.8 ps 与6.2 ps。最后,我们也设计了雷射可靠度实验,并且分析雷射损坏 (degradation) 可能的物理机制 In this thesis, we investigated the characteristics of GaAs based vertical cavity surface emitting lasers (VCSELs) including temperature dependent light verse power (L-I) curves, near-field profiles, high speed modulation, reliability test and failure analysis. We analyze two types of lasers structures experimentally. One is oxide-confinement and the other is proton-implantation. The temperature dependent L-I curves shows the gain off-set effect, which is the unique characteristic of VCSELs. As result, the performance of VCSELs strongly depends on the operating condition. From the near-field profiles, oxide-confined VCSEL has better current and optical confinements than proton-implanted VCSEL. The measured modulation response showed that the relaxation frequency of laser is affected by the parasitic impedance effect and the photon lifetime of oxide-confined and proton-implanted VCSELs are estimated from the modulation response to be about 5.8 ps and 6.2 ps respectively. We also conducted a constant current experiment of the reliability test, and analyzed the possible failure mechanisms of the degradation of lasers. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT900614005 http://hdl.handle.net/11536/69473 |
显示于类别: | Thesis |