标题: | 射频互补式金氧半导体低杂讯放大器之静电放电防护设计 ESD Protection Design with Impedance Isolation Technique for CMOS RF Low Noise Amplifier |
作者: | 周千译 Chien-I Chou 柯明道 Ming-Dou Ker 电子研究所 |
关键字: | ESD;Low Noise Amplifier;RF IC;静电放电防护;低杂讯放大器;射频电路 |
公开日期: | 2002 |
摘要: | 本篇论文主旨在设计一个具高静电放电防护能力之射频互补式金氧半导体低杂讯放大器。我们提出了一个新形态利用电感电容共振产生阻抗隔绝效果的完整静电放电防护电路,其中包含了VDD至VSS间的静电放电防护电路。 论文中第二部份针对静电放电防护电路的寄生效应对低杂讯放大器特性的影响加以探讨,包含S-参数,输入组抗匹配之变动,并提出一完整之杂讯计算公式,且提供了部分参数分析图示及电路模拟结果。 第三部分我们设计并实现了一组操作在5.2GHz频段之互补式射频金氧半导体低杂讯放大器,分成利用传统二极体保护及新型态电感电容共振保护与无静电放电保护之电路三种型态做比较,并实现于一个具厚上层金属线之标准0.25微米1P5M之互补式金氧半导体制程,其中包括电感模型之建立。 实验结果显示具静电放电防护电路之低杂讯放大器会有中心操作位移之情形,利用一外加的输出阻抗匹配电路可使之拉回到所设计的频段。藉使用量测到之S-参数重新模拟的结果显示,新型态电感电容共振保护之低杂讯放大器与传统二极体保护比较具有较佳的射频特性。而实验结果也显示新型电感电容共振保护之低杂讯放大器有较低之杂讯指数,因此在未来射频操作频率愈加增高的趋势之下,此设计将成为更适合高频应用之静电放电防护电路。 经量测,具新型电感电容共振保护之低杂讯放大器可承受4.9仟伏特之人体静电放电模式测试及275伏特机器静电放电模式测试。 A CMOS RF LNA with high ESD sustain ability is presented in this thesis. A novel LC tank ESD protected LNA based on impedance isolation is proposed. The whole ESD design includes power rail ESD clamp circuit between VDD to VSS. In the second part, a detailed and comprehensive noise analysis of the LNA without and with input ESD protection has been investigated, including modified power gain by ESD devices, input matching property, noise figure and the portion of the noise power generated by ESD devices. We provide some noise equation and simulation results in this section. In the third part, three types of 5.2GHz CMOS RF LNA are designed and implement in 0.25-μm CMOS process, including pure LNA without any ESD protection, LNA with novel LC tank ESD protection and LNA with conventional diode ESD protection. We also develop some on-chip inductor modeling. The experimental results show that the center frequencies of ESD protected LNA are shifting. After adding proper output matching network, the ESD protected LNA will have the same center frequency. Re-simulation results based on measured S-parameter show that LC tank protected LNA has better RF performance than diode protected one. And measured noise figure also shows that LC tank protected LNA has lower noise level than diode protected one. Thus the ESD protection with LC tank is more suitable for RF application of higher operating frequency in the future. The LC tank ESD protected LNA can pass a HBM ESD level of 4.9kV and a MM ESD level of 275V. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT910428056 http://hdl.handle.net/11536/70387 |
显示于类别: | Thesis |