標題: Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
作者: Wu, Yuh-Renn
Chiu, Chinghua
Chang, Cheng-Yu
Yu, Peichen
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: LEDs;nanotechnology
公開日期: 1-Jul-2009
摘要: In this paper, InGaN/GaN nanorod LEDs with various sizes are fabricated using self-assembled Ni nanomasks and inductively coupled plasma-reactive ion etching. Photoluminescence (PL) characteristics exhibit size-dependent, wavelength blue shifts of the emission spectra from the nanorod LEDs. Numerical analyses using a valence force field model and a self-consistent Poisson, Schrodinger, and drift-diffusion solver quantitatively describe the correlation between the wavelength blue shifts and the strain relaxation of multiple quantum wells embedded in nanorods with different averaged sizes. Time-resolved PL studies confirm that the array with a smaller size exhibits a shorter carrier lifetime at low temperature, giving rise to a stronger PL intensity. However, the PL intensity deteriorates at room temperature, compared to that of a larger size, possibly due to an increased number of surface states, which decreases the nonradiative lifetime, and hence reduces the internal quantum efficiency.
URI: http://dx.doi.org/10.1109/JSTQE.2009.2015583
http://hdl.handle.net/11536/7058
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2009.2015583
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 15
Issue: 4
起始頁: 1226
結束頁: 1233
Appears in Collections:Articles


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