Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoir (vol 105, 103515, 2009)

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DC Field	Value	Language
dc.contributor.author	Hsieh, Hong-Wen	en_US
dc.contributor.author	Yen, Shun-Tung	en_US
dc.date.accessioned	2014-12-08T15:09:20Z	-
dc.date.available	2014-12-08T15:09:20Z	-
dc.date.issued	2009-06-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3159041	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7118	-
dc.language.iso	en_US	en_US
dc.title	Analysis of GaAs/GaSb/GaAs structures under optical excitation considering surface states as an electron reservoir (vol 105, 103515, 2009)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1063/1.3159041	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	105	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000267599600181	-
dc.citation.woscount	0	-
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