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dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Lih-Juannen_US
dc.contributor.authorTu, King-Ningen_US
dc.date.accessioned2014-12-08T15:09:20Z-
dc.date.available2014-12-08T15:09:20Z-
dc.date.issued2009-06-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl900779jen_US
dc.identifier.urihttp://hdl.handle.net/11536/7130-
dc.description.abstractHomogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi(2) and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation.en_US
dc.language.isoen_USen_US
dc.titleHomogeneous Nucleation of Epitaxial CoSi(2) and NiSi in Si Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl900779jen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume9en_US
dc.citation.issue6en_US
dc.citation.spage2337en_US
dc.citation.epage2342en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Articles