标题: Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
作者: Kuo, Jack J. -Y.
Chen, William P. -N.
Su, Pin
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Interface state;low-frequency noise;process-induced strain;trap density;tunneling attenuation length;uniaxial strained PMOSFET
公开日期: 1-六月-2009
摘要: This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric is reduced by uniaxial strain. The reduced tunneling attenuation length may result in smaller input-referred noise, which represents an intrinsic advantage of low-frequency noise performance stemming from process-induced strain.
URI: http://dx.doi.org/10.1109/LED.2009.2020069
http://hdl.handle.net/11536/7161
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2020069
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 6
起始页: 672
结束页: 674
显示于类别:Articles


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