High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method

Abstract

A. high programming speed with a low-power-consumption wrapped-select-gate poly-Si-oxide-nitride-oxide-silicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (I(PGM)) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.