標題: | High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory |
作者: | Wang, Kuan-Ti Chao, Tien-Sheng Wu, Woei-Cherng Yang, Wen-Luh Lee, Chien-Hsing Hsieh, Tsung-Min Liou, Jhyy-Cheng Wang, Shen-De Chen, Tzu-Ping Chen, Chien-Hung Lin, Chih-Hung Chen, Hwi-Huang 電子物理學系 Department of Electrophysics |
關鍵字: | Flash memory;multilevel states in a cell (MLC);NOR;silicon-oxide-nitride-oxide-silicon (SONOS) |
公開日期: | 1-九月-2010 |
摘要: | For the first time, a high-performance (tau(PGM) = 200 ns/tau(ERS) = 5 ms) cell with superior reliability characteristics is demonstrated in a NOR-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V(TH) distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention. |
URI: | http://dx.doi.org/10.1109/TED.2010.2054530 http://hdl.handle.net/11536/32226 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2054530 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Issue: | 9 |
起始頁: | 2335 |
結束頁: | 2338 |
顯示於類別: | 期刊論文 |