砷化鎵金屬奈米共振腔發光元件研究

Abstract

近幾年，隨著積體光路的發展，奈米共振腔變成一個很重要的議題，本篇論文旨在探討共振腔在奈米尺度的砷化鎵發光元件的製程技術及設計原理。以期能夠成功製作出電激發砷化鎵奈米雷射。 在這篇論文中，我們製作出電激發砷化鎵金屬奈米共振腔，並研究其特性。在第一部分中我們設計了一個三面包覆金屬一面由布拉格反射鏡提供局限的砷化鎵奈米雷射結構。利用分子束磊晶成長的布拉格反射鏡(DBR) 和金屬的高反射率，讓光場被局限在奈米尺度的共振腔中。在此我們對於DBR的議題探討,並且探討在不同尺度下共振腔的表面缺陷復合係數的比較。第二部分我們利用金屬波導截止頻率的概念，利用批覆層砷化鋁鎵和主動層砷化鎵的折射率差異使光場完全被侷限於主動層中，利用模擬將磊晶結構參數最佳化，包括ｎ型半導體厚度及ｐ型半導體厚度。再利用模擬找出結構適當大小可以將光模侷限於主動區。而為了提高品質因子接著我們利用快速熱退火優化金屬條件，並且分析金屬的損耗及平整度。最後對於量測結果分析探討。

In the past, with the developments and requirements of the photonic circuit, the study of the nanolaser recently become a popular investigated topic. In this thesis, we will discuss GaAs-based nano metallic-cavity design and theorem. In order to be able to successfully produce electrical driven GaAs-based Metallic cavity laser . In this thesis, we have designed and processed the metal encapsulated nanocavity light emitting diode with electrical injection at room temperature and discussed its characteristic .In the first part, we designed a GaAs nanocavity structure with top metal and bottom DBRs to provide good confinement. We will discussed the DBR issue and surface recombination in different size of cavity. In the second part, we utilized the concept of cut off waveguide, and utilizing the index different between Al0.7Ga0.3As and GaAs to confine the light in the active region. Optimize the epitaxial structure include p-type and n-type thickness. In order to confine light in the active region and we find out the appropriate size by simulation. Then we annealed the silver to optimize cavity quality factor and analysis the loss tern and the flatness. Finally, discuss the measurement result and simulation.