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dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorYang, Chan-Hoen_US
dc.contributor.authorYu, Puen_US
dc.contributor.authorMartin, Lane W.en_US
dc.contributor.authorShafer, Padraicen_US
dc.contributor.authorRamesh, R.en_US
dc.date.accessioned2014-12-08T15:09:39Z-
dc.date.available2014-12-08T15:09:39Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl900723jen_US
dc.identifier.urihttp://hdl.handle.net/11536/7385-
dc.description.abstractWe demonstrate an approach to create a one-dimensional nanoscale array of domain walls in epitaxial La-substituted BiFeO(3) films. We have used a DySCO(3) (110)(o) single-crystal substrate to provide an anisotropic strain to exclude two of the possible structural variants. Furthermore, through careful control of electrostatic boundary conditions, such as the thickness of the SrRuO(3) bottom electrode to induce the self-poling effects, we can choose to obtain either 1090 or 710 one-dimensional periodic domain walls. Detailed measurements of the domain structures is shown using piezoresponse force microscopy and X-ray diffraction, which confirms that these periodic structures are the same as those suggested in previous literature.en_US
dc.language.isoen_USen_US
dc.titleNanoscale Control of Domain Architectures in BiFeO(3) Thin Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl900723jen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume9en_US
dc.citation.issue4en_US
dc.citation.spage1726en_US
dc.citation.epage1730en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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