標題: Exploring Topological Defects in Epitaxial BiFeO3 Thin Films
作者: Vasudevan, Rama K.
Chen, Yi-Chun
Tai, Hsiang-Hua
Balke, Nina
Wu, Pingping
Bhattacharya, Saswata
Chen, L. Q.
Chu, Ying-Hao
Lin, I-Nan
Kalinin, Sergei V.
Nagarajan, Valanoor
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: BiFeO3;closure-domain;topological defects;multiferroic;thin-film;PPM
公開日期: 1-二月-2011
摘要: Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
URI: http://dx.doi.org/10.1021/nn102099z
http://hdl.handle.net/11536/150249
ISSN: 1936-0851
DOI: 10.1021/nn102099z
期刊: ACS NANO
Volume: 5
起始頁: 879
結束頁: 887
顯示於類別:期刊論文