標題: | Exploring Topological Defects in Epitaxial BiFeO3 Thin Films |
作者: | Vasudevan, Rama K. Chen, Yi-Chun Tai, Hsiang-Hua Balke, Nina Wu, Pingping Bhattacharya, Saswata Chen, L. Q. Chu, Ying-Hao Lin, I-Nan Kalinin, Sergei V. Nagarajan, Valanoor 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | BiFeO3;closure-domain;topological defects;multiferroic;thin-film;PPM |
公開日期: | 1-二月-2011 |
摘要: | Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed. |
URI: | http://dx.doi.org/10.1021/nn102099z http://hdl.handle.net/11536/150249 |
ISSN: | 1936-0851 |
DOI: | 10.1021/nn102099z |
期刊: | ACS NANO |
Volume: | 5 |
起始頁: | 879 |
結束頁: | 887 |
顯示於類別: | 期刊論文 |