利用氫化物氣相磊晶法直接在藍寶石基板上成長非極性氮化鎵之研究

Abstract

本論文使用氫化物氣相磊晶法直接在藍寶石基板上成長非極性氮化鎵，並討論及分析非極性氮化鎵的成長機制，藉由改變不同的參數，例如載子氣體、磊晶溫度、環境壓力及成長時間來觀察其表面形貌的變化。並進一步選取其中形貌表現較佳的樣品進行量測分析，如利用掃描式電子顯微鏡觀察其表面之細部形貌，以X-ray繞射儀觀察磊晶品質優劣，以拉曼散射儀了解晶格間應力變化之情況，以及使用光激螢光光譜儀了解其樣品光性優劣，並與成長在模板上的非極性氮化鎵比較其優缺點。 直接成長在藍寶石基板上的非極性氮化鎵，其磊晶品質雖較成長在模板上的非極性氮化鎵不佳，卻可以大幅降低製程成本，且與成長在模板上之樣品無天壤之別，尚可有極大的發展空間。

In this paper, using hydride vapor phase epitaxy growth of non-polar GaN directly on sapphire substrates, and discussion and analysis of non-polar GaN growth mechanism by changing various parameters, such as carrier gases, temperature epitaxy , environmental pressures and growth time to observe the changes in surface topography. And further select one of the better performance of the sample topography measurement and analysis, such as scanning electron microscopy to observe the detailed morphology of surfaces to observe X-ray diffraction quality epitaxial merits of Raman scattering instrument to understand the crystal Layout changes in stress situations, and using photoluminescence spectroscopy to understand the pros and cons of the sample optical properties, and in non-polar GaN template compared with the growth of its advantages and disadvantages. Directly grown on a sapphire substrate, a non-polar GaN, though smaller than its quality epitaxial growth on non-polar GaN template poor, but they can significantly reduce process costs, and with the growth in the sample of the template without Tianrang do not, they can still have a great space for development.