标题: Domain growth dynamics in single-domain-like BiFeO(3) thin films
作者: Chen, Y. C.
Lin, Q. R.
Chu, Y. H.
材料科学与工程学系
Department of Materials Science and Engineering
公开日期: 23-三月-2009
摘要: We present a quantitative study of 180 degrees domain wall motion in epitaxial BiFeO(3) (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO(3). The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO(3)/SrRuO(3) films.
URI: http://dx.doi.org/10.1063/1.3109779
http://hdl.handle.net/11536/7467
ISSN: 0003-6951
DOI: 10.1063/1.3109779
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 12
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