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dc.contributor.authorKuo, Ming-Chingen_US
dc.contributor.authorKao, Shiau-Wenen_US
dc.contributor.authorChen, Chih-Hungen_US
dc.contributor.authorHung, Tsun-Shuenen_US
dc.contributor.authorShih, Yi-Shingen_US
dc.contributor.authorYang, Tzu-Yien_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2014-12-08T15:09:50Z-
dc.date.available2014-12-08T15:09:50Z-
dc.date.issued2009-03-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2008.2012366en_US
dc.identifier.urihttp://hdl.handle.net/11536/7532-
dc.description.abstractA fully integrated direct-conversion tuner is implemented in 0.13 mu m CMOS technology. A broadband noise-canceling balun LNA with the proposed dual cross-coupling technique helps achieve an overall receiver noise figure from 3.7 to 4.3 dB while consuming only 3.6 mW. The proposed current-mode switching scheme improves the achievable SNIR with a gain step of 15 dB, providing IIP3 improvement of 18 dB and NF degradation of only 6 dB. Moreover, design trade-offs are carefully considered in designing the baseband circuit, which provides wide gain tuning and bandwidth accuracy with a DC offset residual less than 6 mV. The measured maximum SNR values are better than 30 dB over wide input power levels, ensuring robust reception in a mobile environment. All circuit blocks are operated at 1.2 V. As a result, the tuner consumes power as low as 114 mW in the continuous mode. This compact tuner supports both UHF and L-bands, and occupies only 7.2 mm(2) die area.en_US
dc.language.isoen_USen_US
dc.subjectBalunen_US
dc.subjectCMOS RFen_US
dc.subjectcurrent-mode switchingen_US
dc.subjectdirect-conversionen_US
dc.subjectDVB-Hen_US
dc.subjectDVB-Ten_US
dc.subjectmobile TVen_US
dc.subjectnoise-canceling LNAen_US
dc.subjectOFDMen_US
dc.subjectpassive mixeren_US
dc.subjectreceiveren_US
dc.subjecttuneren_US
dc.titleA 1.2 V 114 mW Dual-Band Direct-Conversion DVB-H Tuner in 0.13 mu m CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2008.2012366en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume44en_US
dc.citation.issue3en_US
dc.citation.spage740en_US
dc.citation.epage750en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000263918900006-
dc.citation.woscount16-
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