三五族晶片與圖形化矽基板的直接鍵合

Abstract

我們在矽基板上設計了不同尺寸的光柵，並在光柵凹槽中分別填入了二氧化矽以及鋁這兩種物質，去觀察其反射率產生的變化，並以 FDTD 去模擬光柵反射，和所量測到的反射率做比較。又將三五族材料以低溫鍵合的方式，直接接合在我們所設計的光柵上，量測其光激發螢光頻譜，找尋光柵反射率以及螢光頻譜間的關係。我們也嘗試了許多不同材料以及不同條件的低溫鍵結，以期找尋到一個最適合鍵結的鍵結環境。

We designed the different periodicities grating by the standard photolithography technique on silicon substrate. And silicon dioxide or aluminum filled in the interspace of grating. Then, we compared the reflectivity of grating in measurement and simulation. The III–V Compound bonded on the grating at low temperature without adhesives. After that, used photoluminescence(PL) system to pump our sample. We observed the relative of PL spectrum and reflectivity of grating. In addition, We also attempt to bond many different material at different bonding condition. That can help us to seek the best bonding condition.