超快時間解析反射技術研究氮砷化銦鎵單層量子井

Abstract

在本論文中，我們比較由金屬有機化學氣相沈積法(MOCVD)成長的砷化銦鎵和氮砷化銦鎵單層量子井的超快載子動力學。從螢光光譜的量測，我們可以發現氮砷化銦鎵的能隙因為氮的加入比砷化銦鎵的能隙小很多，可以發出波長為1.3μm 的光。我們利用飛秒時析反射量測研究載子的鬆弛過程。比較這兩個樣品的量測結果，我們發現在氮砷化銦鎵的載子生命期比在砷化銦鎵的短。這可能是因為載子鬆弛過程中，載子被加入氮所造成的缺陷捕捉所導致。

The comparative analysis of the ultrafast carrier dynamics of metal-organic chemical vapor deposition (MOCVD) grown In0.4Ga0.6As and In0.4Ga0.6As0.995N0.005 single quantum wells (SQW) is reported. From photoluminescence (PL) measurement we conclude that the incorporation of a low content N in InGaAsN reduces the band-gap energy significantly and allows emission wavelengths shift to 1.3 μm. Carrier dynamics were investigated by femtosecond time-resolved photoreflectance measurement at 800 nm with various pump intensities. Comparison with these two samples indicates that the carrier relaxation in the In0.4Ga0.6As0.995N0.005 SQW is dominated by defect traps associated with the N incorporation.