標題: Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)
作者: Liu, W. -R.
Li, Y. -H.
Hsieh, W. F.
Hsu, C. -H.
Lee, W. C.
Lee, Y. J.
Hong, M.
Kwo, J.
光電工程學系
Department of Photonics
公開日期: 1-Jan-2009
摘要: High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y(2)O(3) buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y(2)O(3) follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y(2)O(3). ZnO lattice aligns with the hexagonal O sublattice in Y(2)O(3) and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y(2)O(3) and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results.
URI: http://dx.doi.org/10.1021/cg8003849
http://hdl.handle.net/11536/7762
ISSN: 1528-7483
DOI: 10.1021/cg8003849
期刊: CRYSTAL GROWTH & DESIGN
Volume: 9
Issue: 1
起始頁: 239
結束頁: 242
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