離子植入製程監測方法之研究

Abstract

本論文主要藉由探討半導體廠產品電性異常之實例，進行離子植入製程對電性測試之相關性研究，並透過一連串有系統之實驗，找出當產品電性異常時可能之離子植入製程變異及其影響程度。在本實驗中，傳統機台即時監控系統的分析結果與產品最後電性表現截然不同。此一發現顯示積體電路產業界目前所使用的監控系統有效性不足，因此藉由本研究發展出一套更有效的機台即時監控系統 (effective monitor system, EMS)，以期在機台發生異常時，可及時發現問題，以減少產品的損失。 本研究針對傳統離子植入機台即時監控系統的失效內容，利用分析離子佈植縱深與入射離子束的能量與角度關係，以及探討離子佈植前後的電性變化，成功研發出了高靈敏度的EMS系統，經過實驗及實際產品證明，此EMS系統在離子佈植機台發生變異時，較傳統之即時監控系統，能更快速有效地反應出機台變異之主因，提供工程師及研發人員維修與判斷。

The main objective of the thesis is to study the cause of the diagnosis failure of the conventional monitor system for ion implantation processes and thereby set up an effective in-line method to monitor the process. By carrying out a series of experiments to analyze electrical characteristics of the product devices, we found that the conventional monitor system gave a contradictory analysis results against electrical measurements. Therefore it is important to develop a better system to monitor any hardware failure in time to alleviate the end-product loss.

In order to understand why the conventional monitor system failed during the ion implantation process, we studied the relation of the projected range of the ion beam with the implant energy and the implant angle, and the results were correlated with the electrical characteristics of the product device. Based on these studies, an effective monitor system (EMS) was successfully developed. The EMS system has been verified to be very effective to monitor in-line hardware anomaly during ion implantation processes, and implemented in the production line.