标题: | 沉积后电浆处理对二氧化铪金氧半导体结构电特性之影响 The Effect of Post-Deposition Plasma Treatment on The Electrical Characteristics of HfO2 MOS Structure |
作者: | 叶星辉 Hsing-Hui Yeh 张国明 桂正楣 Dr. Kow-Ming Chang Dr. Cheng-May Kwei 电子研究所 |
关键字: | 电浆处理;二氧化铪;High-k;Plasma Treatment;HfO2;High-k |
公开日期: | 2006 |
摘要: | 当场效电晶体的闸极介电层厚度微缩至1.5 奈米厚时,将产生一些諸如电子穿遂效应等严重的问题。因此极需以高介电系數材料取代二氧化矽作为闸极绝缘层,其中二氧化铪就是目前被认为最有可能取代二氧化矽的材料。本实验以铝-二氧化铪-矽之MIS 电容结构为分析元件。首先利用直流溅镀法沉积铪金属,接着以低温通氧气的爐管氧化金属铪,而得到氧化铪薄膜。接下来,试片在氧化后立刻去做各种不同时间的电浆处理,其气体来源分别是氮气,一氧化二氮,氧气。在不同电浆处理条件下的薄膜电性,经由C-V 和I-V 量测得知,并讨論二次离子质谱仪的特性图。另外也藉由磁滞效应、SILC特性、定电压加压测试和崩溃电荷分布量测來讨論各种电浆处理条件下元件的可靠度。在这些条件之中,其中以通一分钟氮气电浆的样品的呈现出最大的电容质(增加了50%),最小的漏电流(两个数量级的下降),以及优异的可靠度。这是因为氮气电浆处理会抑制介面氧化层的成长,所以其电容值在被电浆伤害破坏前,会因修补介面的效应而持续的增加。另一方面,虽然一氧化二氮和氧气电浆处理在较短的制程时间内依然是可行的改良电性的方法,但由于其容易促生额外氧化层的特性,使得其电容值还是比氮气电浆处来得小。 When the MOSFET gate insulator is scaled below 1.5 nm, some serious problems such as direct electric tunneling will occur. Therefore, high dielectric constant material is very desirable to replace SiO2. Hafnium oxide is a most promising material for future MOSFET gate oxide applications. In this study, we used Al-HfO2-Si MIS capacitor as our analysis device. First, we used DC sputter system to deposit hafnium metal and then proceeded with furnace under oxidation at low temperature to prepare HfO2 thin film. After oxidation process, we had an additional plasma treatment with N2, N2O, or O2 plasma for different process durations. The electrical characteristics of the film under different oxidation conditions were discussed by C-V and I-V curves. Moreover, the SIMS (Secondary Ion Mass Spectrometer) profile was also analyzed. The reliability of the film under different plasma treatment conditions were discussed by hysteresis effect, SILC ( Stress Induced Leakage Current ) profile, CVS ( Constant Voltage Stress ) test, and QBD ( charge-to-breakdown ) distribution. Among these conditions, the sample treated by N2 plasma for 1 minute represents the largest capacitance ( 50%increasement ), lowest leakage current ( 2 order reduction ), and excellent reliability. Since the N2 plasma treatment can suppress the the formation of interfacial oxide between the high-k/Si interface, the capacitance of the high-k dielectric can take advantage from the N2 plasma treatment before the plasma damage occur. On the contrary, the N2O and O2 plasma can improve the interface characteristics in short period, the property that they are easy to form an additional oxide layer in the high-k/Si interface will degrade the dielectric’s capacitance when compared with N2 plasma treatment |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009311585 http://hdl.handle.net/11536/78058 |
显示于类别: | Thesis |
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