标题: 利用SOI制作之吸收式微型光点形状量测系统
Absorption Type Micro Optical Profile Measurement System in SOI Substrates
作者: 潘均宏
Chun-Hung Pan
邱一
Yi Chiu
电控工程研究所
关键字: 微光点;微光机电;刀缘扫瞄法;SOI;focused laser spot;knife edge;MEMS
公开日期: 2006
摘要: 随着光储存等应用系统的迅速发展,微光点的量测变得越来越迫切和重要,利用传统的远场光学方法并不能直接量测聚焦光点,且解析度受限于光感测器的像素大小(约5 μm)。然而,使用近场光学量测却因为要将物体摆设在待测光场的近场范围内,系统架设复杂、高成本又不易实现即时量测,而且其解析度也受限于探针的孔径。因此,为了提供高解析度、降低成本又方便使用的微光点量测方法,我们提出了一种利用扫瞄刀缘法(scanning knife-edge method)的微光点大小及形状量测系统,整合了梳状致动器、光感测器和平整的刀缘扫瞄板以直接对微光点作量测。
为了实现此一系统,我们选择了透过SOI和可以整合电路的CMOS后制程两方面作为目标前进,在本文中,成功的利用SOI整合了上述元件并提出了一个新的背向干蚀刻方式去改善良率,我们也对完成的元件作测试和讨论,包括致动器动态响应和光感测器的响应度。另外,透过CIC的制程服务,设计并布局的CMOS制程中整合了上述元件和电路,经过了测试实验,也验证了所提出CMOS后制程的可行性。
最后,我们将完成的反射式和吸收式SOI元件对雷射聚焦光点大小作量测,利用反射式元件量测的光点大小和形状成功的验证此一系统。在吸收式系统的量测方面,将讨论面临到的问题和改善的方向以奠定日后对微光机电整合晶片研发的基础。
As the optical spot size in applications such as optical data storage gets smaller, the measurements of focused laser spot become more necessary and important. In conventional far-field optical distribution, the micro spot size can not be acquired directly. The measurements performed by near-field scanning optical microscopes (NSOM) are more complex and costly because the detector must be placed in the near-field proximity. Therefore, a microelectromachanical system (MEMS) optical spot profile measurement system based on the scanning knife-edge technique is proposed. In the fabricated device, a knife-edge plate and a photo detector are integrated on the micro actuator to scan across the optical distribution.
The fabrications are performed by using SOI (silicon-on-insulator) MEMS and CMOS (complementary-metal-oxide-semiconductor) MEMS. In the thesis, a new approach is proposed for SOI process to dry etching the backside silicon. The fabricated components, including comb actuator and photo detector, are measured and discussed. The CMOS device is also designed to attempt a fully integration with circuits. By the test experiments, the feasibility of the proposed CMOS post processes is verified.
At last, the focused laser spot measurements are performed by the SOI device. The obtained spot size and profile shows a good agreement to the theoretical value and demonstrate the system. In the absorption type, the encountered problems are discussed to provide fundamentals for further researches.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009312582
http://hdl.handle.net/11536/78270
显示于类别:Thesis


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