雙頻升頻器與結合被動元件正交相位降頻器

Abstract

本篇論文主要研究在射頻積體電路中被動元件與主動混頻器整合，被動元件包含電感，電壓器，耦合線，Marchand Balun的應用。除此之外，並且針對TSMC 0.35 um SiGe BiCMOS所提供的電感做一個特性的整理。 在雙頻升頻器中，利用了TSMC 0.35 um SiGe BiCOMS製程製作電感，並使用其製作雙頻電流合成器，同樣的概念也運用到TSMC 0.18 um COMS製程上，以及單邊頻譜升頻器。另外在正交相位降頻器方面，利用TSMC SiGe 0.35 um BICMOS，TSMC 0.18 um CMOS，以及TSMC 0.13 um CMOS製程製作，由於各製特性不同，在被動元件設計方面，根據製程不同的特性設計相異的被動元件架構。

In this thesis, we focus on the combine of the passive components and active mixer in radio frequency integrated circuit. The passive components includes inductors, transformers , couplers, and , Marchand balun . Besides , we arranged the inductors characteristic graphs provides by TSMC 0.35um SiGeBiCMOS technology process. In dual-band up converter, we implement the self-designed inductors by using the TSMC 0.35 um CMOS technology process , and use it to design dual band current combiner. The same concept is also used to implement circuits by using TSMC 0.18um CMOS technology process, and integrated into single side band up converter. On the other hand, in quadrature phase down converter, we implement circuits by TSMC 0.35um SiGeBiCMOS technology process, TSMC 0.18um CMOS technology process, and TSMC 0.13um CMOS technology process. Because of the differences between each process, the architectures of passive components are different by which process is being used.