標題: | Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate |
作者: | Pai, Yi-Hao Meng, Fan-Shuen Lin, Chun-Jung Kuo, Hao-Chung Hsu, Shih-Hsin Chang, Yia-Chung Lin, Gong-Ru 光電工程學系 Department of Photonics |
公開日期: | 1-Jan-2009 |
摘要: | The Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO(2)-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance and refractive index of 0.88% and 1.12, respectively, at 435 nm due to the air/Si mixed structure and highly roughened surface. The reflectance can be < 10% with a corresponding refractive index of < 1.80 between 190 and 670 nm. Lengthening the Si nanopillars from 150 +/- 15 to 230 +/- 20 nm further results in a decreasing reflectance, corresponding to a reduction in refractive index by Delta n/n = 18% in the visible and near-infrared wavelength region. After dry-etching an Si wafer into Si nanopillars, the weak blue-green luminescence with double consecutive peaks at 418-451 nm is attributed to the oxygen defect (O(2-))-induced radiation, which reveals less relevance with the ultra-low-reflective Si nanopillar surface. |
URI: | http://dx.doi.org/10.1088/0957-4484/20/3/035303 http://hdl.handle.net/11536/7858 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/20/3/035303 |
期刊: | NANOTECHNOLOGY |
Volume: | 20 |
Issue: | 3 |
結束頁: | |
Appears in Collections: | Articles |
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