Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, Chao-Ching | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.contributor.author | Luo, Guang-Li | en_US |
dc.contributor.author | Liu, Jun-Cheng | en_US |
dc.contributor.author | Chen, Yi-Cheng | en_US |
dc.contributor.author | Chang, Yao-Feng | en_US |
dc.contributor.author | Wang, Shin-Yuan | en_US |
dc.contributor.author | Kei, Chi-Chung | en_US |
dc.contributor.author | Hsiao, Chien-Nan | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.date.accessioned | 2014-12-08T15:10:26Z | - |
dc.date.available | 2014-12-08T15:10:26Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.3058724 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7972 | - |
dc.description.abstract | The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3058724] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.3058724 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 27 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 130 | en_US |
dc.citation.epage | 133 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000265839000024 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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