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dc.contributor.authorCheng, Chao-Chingen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.contributor.authorLiu, Jun-Chengen_US
dc.contributor.authorChen, Yi-Chengen_US
dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorWang, Shin-Yuanen_US
dc.contributor.authorKei, Chi-Chungen_US
dc.contributor.authorHsiao, Chien-Nanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:10:26Z-
dc.date.available2014-12-08T15:10:26Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.3058724en_US
dc.identifier.urihttp://hdl.handle.net/11536/7972-
dc.description.abstractThe authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3058724]en_US
dc.language.isoen_USen_US
dc.titleFive-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.3058724en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume27en_US
dc.citation.issue1en_US
dc.citation.spage130en_US
dc.citation.epage133en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000265839000024-
dc.citation.woscount2-
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