標題: High-Performance Metal-Insulator-Metal Capacitor Using Quality Properties of High-kappa TiPrO Dielectric
作者: Huang, Chingchien
Cheng, Chun-Hu
Lee, Ko-Tao
Liou, Bo-Heng
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitors;high-k dielectric thin films;iridium;leakage currents;MIM devices;titanium compounds;work function
公開日期: 2009
摘要: In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Ti(x)Pr(1-x)O (x approximate to 0.67) metal-insulator-metal (MIM) capacitors using high-work-function (similar to 5.3 eV) Ir top electrode. Low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2x10(-7) A/cm(2) was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.
URI: http://hdl.handle.net/11536/7988
http://dx.doi.org/10.1149/1.3073549
ISSN: 0013-4651
DOI: 10.1149/1.3073549
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 156
Issue: 4
起始頁: G23
結束頁: G27
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