標題: Air Stable Ambipolar Organic Field-Effect Transistors and Complementary-Like Inverters Prepared with Surface-Modified Gate Dielectrics
作者: Chen, Fang-Chung
Huang, Yu-Jen
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: invertors;organic field effect transistors;passivation;p-n heterojunctions
公開日期: 2009
摘要: Air stable ambipolar organic field-effect transistors containing p/n heterojunctions are achieved by passivating the electron trapping sites on the SiO(2) surface. The morphology of the heterojunctions is controlled by the film thicknesses of p- and n-channel semiconductors, thereby affecting the device air stability and the electrical characteristics. Further, air stable complementary-like inverters, which are able to work both in the first and the third quadrants with a high gain up to 30, are also demonstrated.
URI: http://hdl.handle.net/11536/7999
http://dx.doi.org/10.1149/1.3117250
ISSN: 1099-0062
DOI: 10.1149/1.3117250
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 7
起始頁: H252
結束頁: H255
Appears in Collections:Articles