Improved Performance of InGaN-GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array

doi:10.1149/1.3156834

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liao, Cheng	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:10:28Z	-
dc.date.available	2014-12-08T15:10:28Z	-
dc.date.issued	2009	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8006	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3156834	en_US
dc.description.abstract	A periodic n-bowl mirror structure was introduced into light-emitting diodes with roughened p-GaN surface (RP-LED) by wafer bonding and laser lift-off technology. The performance of these n-bowl mirror light-emitting diodes (NBM-LEDs) was better than that of RP-LED. Besides, the light intensity and the output power of NBM-LEDs were increased with the decrease in n-bowl dimension. The view angle was decreased with the diameter of the n-bowl.	en_US
dc.language.iso	en_US	en_US
dc.subject	gallium compounds	en_US
dc.subject	III-V semiconductors	en_US
dc.subject	indium compounds	en_US
dc.subject	light emitting diodes	en_US
dc.title	Improved Performance of InGaN-GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3156834	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	12	en_US
dc.citation.issue	9	en_US
dc.citation.spage	J77	en_US
dc.citation.epage	J79	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000268064500032	-
dc.citation.woscount	1	-
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