Full metadata record
DC FieldValueLanguage
dc.contributor.author柯力泰en_US
dc.contributor.authorKE , LI-TAIen_US
dc.contributor.author楊賜麟en_US
dc.contributor.authorS. L. Yangen_US
dc.date.accessioned2014-12-12T03:01:44Z-
dc.date.available2014-12-12T03:01:44Z-
dc.date.issued2005en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009377503en_US
dc.identifier.urihttp://hdl.handle.net/11536/80319-
dc.description.abstract本論文利用ISE-TCAD已設計的850nm氧化侷限型結構,模擬元件結構摻雜濃度最佳化條件,而得n型DBR的摻雜濃度為 = 2.5x1O18 cm-3; p型DBR的摻雜濃度為 = 1x1O19 cm-3是最適當的。或許製程上的進步我們可以再提高摻雜濃度,但因電子電洞移動率及所造成的材料電阻率的差異,須保有 > 的前提。 因考慮降低串聯電阻、臨界電流的問題,故設計了漸變式(graded) 披覆層與張力(tensile strain)披覆層。從元件的L-I-V特性表現可見,當張力披覆層厚度大於10 nm 時元件即無法雷射(Lasing),此應是量子穿隧效應的結果;而當張力披覆層厚度為3 nm 時,則有非常好的發光效率與臨界電流,此可證明張力披覆層的功效。 最後,我們模擬分析各種狀況的分佈型布拉格反射鏡(DBR)反射率。對於漸變式(graded) DBR而言,當中間層厚度為20 nm 以上時,DBR 就需要25對以上才能有與一般階梯式DBR一樣的反射率水準。若 DBR 各層厚度有+/- 1%誤差度,只要有25對以上的DBR,其截 止帶( stop band )宽度即夠大,而在850 nm 處的反射率值也幾乎不受影響。另外以矩陣光學為基礎,我們進一步分析DBR對非正向入射光的反射率,在 45º 的入射角下,形成建設性干涉的光的波長約縮短約20 nm。zh_TW
dc.description.abstractIn this thesis work, we simulated and analyzed the optoelectronic properties of 850 nm oxide-confined vertical-cavity surface-emitting laser (VCSEL) diodes using ISE-TCAD simulation software. For the optimized characteristicsof VSCELs, n type DBR doping concentration = 2.5x1O18 cm-3 and p type DBR doping concentration = 1x1O19 cm-3 .Even thought we can increase the doping density in the advantage process, still need to follow > are expected. Considering the resistance and threshold current concerns of VCSELs, we simulated the graded and tensile strain cladding layers. Judging from the L-I-V characteristics, we found the fact that the thicker tensile-strain cladding layer greater than 10nm may prohibit the device from lasing. And the 3 nm-thick tensile-strain cladding layer can give low threshold currents and high lasing efficiency of VCSELs. Furthermore, we simulated the optical reflectance of various DBR structures. In the graded DBRs, when the thickness of the graded layers are over 20 nm, 25 pairs more DBR structures can give the same reflectance of regular abrupt DBRs. As the thickness of DBR layers are in 2% variation, processes, 25 pairs more DBR structure can also provide the same reflectance values of non-variant DBRs at the main wavelength and applicable stop-band width. Finally we utilized the matrix optics to analyze the effects of pair numbers and light incident angle on the reflectivity spectra of DBR. For the case of 45º incident angle of light ,the resonant wavelength shift about 20 nm.en_US
dc.language.isozh_TWen_US
dc.subject850nm氧化侷限型結構zh_TW
dc.subject分佈型布拉格反射鏡zh_TW
dc.subject張力披覆層zh_TW
dc.subject850 nm oxide-confined vertical-cavity surface-emitting laseren_US
dc.subjectDBRen_US
dc.subjecttensile-strain claddingen_US
dc.title850 nm 面射型雷射布拉格反射鏡特性之模擬分析zh_TW
dc.titleSimulation and Analysis of Distributed Blagg Reflectors 850 nm VCSELsen_US
dc.typeThesisen_US
dc.contributor.department理學院應用科技學程zh_TW
Appears in Collections:Thesis