A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers

标题:	A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers
作者:	Chang, Ming-Feng Lee, Po-Tsung McAlister, S. P. Chin, Albert 电子工程学系及电子研究所光电工程学系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
关键字:	flexible electronics;high-k dielectric thin films;organic semiconductors;random-access storage;semiconductor thin films;thin film transistors
公开日期:	8-十二月-2008
摘要:	We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-kappa dielectric as charge trapping, blocking, and tunneling gate insulator layers.
URI:	http://dx.doi.org/10.1063/1.3046115 http://hdl.handle.net/11536/8040
ISSN:	0003-6951
DOI:	10.1063/1.3046115
期刊:	APPLIED PHYSICS LETTERS
Volume:	93
Issue:	23
结束页:
显示于类别：	Articles

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APA	Chang, M., Lee, P., McAlister, S. P., & Chin, A. (2008). flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers. WOS:000261699700072.
Bibtex	@article{Chang2008flexible, title={flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers}, author={Chang, Ming-Feng and Lee, Po-Tsung and McAlister, S. P. and Chin, Albert}, journal={WOS:000261699700072}, year={2008}, url={https://ir.lib.nycu.edu.tw/handle/11536/8040?locale=zh_CN}, }