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dc.contributor.authorIlchenko, V. V.en_US
dc.contributor.authorMarin, V. V.en_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorPanarin, K. Y.en_US
dc.contributor.authorBuyanin, A. A.en_US
dc.contributor.authorTretyak, O. V.en_US
dc.date.accessioned2014-12-08T15:10:32Z-
dc.date.available2014-12-08T15:10:32Z-
dc.date.issued2008-12-07en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/41/23/235107en_US
dc.identifier.urihttp://hdl.handle.net/11536/8044-
dc.description.abstractThe negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.en_US
dc.language.isoen_USen_US
dc.titleRoom temperature negative differential capacitance in self-assembled quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/41/23/235107en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume41en_US
dc.citation.issue23en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000261052500038-
dc.citation.woscount1-
Appears in Collections:Articles


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