Room temperature negative differential capacitance in self-assembled quantum dots

doi:10.1088/0022-3727/41/23/235107

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ilchenko, V. V.	en_US
dc.contributor.author	Marin, V. V.	en_US
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Panarin, K. Y.	en_US
dc.contributor.author	Buyanin, A. A.	en_US
dc.contributor.author	Tretyak, O. V.	en_US
dc.date.accessioned	2014-12-08T15:10:32Z	-
dc.date.available	2014-12-08T15:10:32Z	-
dc.date.issued	2008-12-07	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0022-3727/41/23/235107	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8044	-
dc.description.abstract	The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.	en_US
dc.language.iso	en_US	en_US
dc.title	Room temperature negative differential capacitance in self-assembled quantum dots	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0022-3727/41/23/235107	en_US
dc.identifier.journal	JOURNAL OF PHYSICS D-APPLIED PHYSICS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	23	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000261052500038	-
dc.citation.woscount	1	-
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