標題: | Effects of annealing temperature on the resistance switching behavior of CaCu(3)Ti(4)O(12) films |
作者: | Shen, Yu-Shu Chiou, Bi-Shiou Ho, Chia-Cheng 電子工程學系及電子研究所 Innovative Packaging Research Center Department of Electronics Engineering and Institute of Electronics Innovative Packaging Research Center |
公開日期: | 1-十二月-2008 |
摘要: | In this study, a novel material CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2008.06.034 http://hdl.handle.net/11536/8071 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2008.06.034 |
期刊: | THIN SOLID FILMS |
Volume: | 517 |
Issue: | 3 |
起始頁: | 1209 |
結束頁: | 1213 |
顯示於類別: | 期刊論文 |